| 초록 |
Ammonia gas detection is required in various fields such as agricultural and chemical industries as well as automobile exhaust gas monitoring. Although, low concentration of less than 5 ppm ammonia cannot be detected by human nose, but long term exposure may put an exposed casualty at high risk of life threat. Therefore, it is very important to detect low concentration of ammonia quickly and accurately. AlGaN/GaN HEMT (High Electron Mobility Transistor) based gas sensor using ZnO nanostructures as an ammonia detection material was fabricated. The sensor was able to detect as low as 100 ppb ammonia in a wide temperature range from room temperature to 300℃ and the response time was less than 1s. Fabrication and characteristics of highly sensitive AlGaN/GaN HEMT with ZnO nanorods on gate region will be introduced. |
