화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2014년 가을 (10/06 ~ 10/08, 제주 ICC)
권호 39권 2호
발표분야 대학원생 구두발표 (발표10분)
제목 3D-Vertical Organic Transistor Memory Devices with High Capacity Data Storage Using Multi-Stacking of Charge Trapping Metal Nanoparticles
초록 Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low memory capacities to high-capacity memory devices. Here, we report the high-capacity OFET memories based on the multi-layer stacking of densely packed hydrophobic metal nanoparticle (NP) layers in place of the traditional single charge-trapping layer systems. We demonstrated that the memory performances of devices could be significantly enhanced by controlling adsorption isotherm behavior, multi-layer structure, and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au NPs (TOA-AuNPs) were layer-by-layer assembled with an poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multi-stacked charge trapping layers. For a single AuNP layer with a number density of 1.82 × 1012 cm–2, the memory window was measured to be 97 V. And the 4 AuNP layers exhibited a large memory window exceeding 145 V.
저자 조익준1, 김범준2, 조정호2, 조진한1
소속 1고려대, 2성균관대
키워드 Layer-by-Layer; Transistor memory
E-Mail