| 초록 |
I-III-VI chalcogenides are appealing candidates for synthesis of heavy metal-free quantum dot (QD) emitters. Such I-III-VI QDs can possess a high degree of compositional flexibility, affording a fine tailoring of band gap and photoluminescence (PL). Generally, their PL exhibits a strong Stokes-shift along with a highly broad PL. Such intrinsically broad PL is well suited for a solid-state white lighting device that prefers QD emitters with a large spectral coverage towards a high color rendering property. In this talk, we present synthetic progress in color-tuned I-III-VI type Cu-X-S (X=In, Ga) QDs and their promising application to electroluminescent (EL) devices, which are often called quantum dot-light-emitting diodes (QLEDs). Our multilayered QLEDs, consisting of a hybrid combination of organic hole transport layer plus inorganic electron transport layer, are fabricated via all-solution processing to demonstrate a high-efficiency, high-color rendering white lighting planar device. |
