| 초록 |
Graphitic carbon nitride (g-C3N4) with a bandgap of ~2.7 eV, a metal-free polymeric organic semiconductor, has attracted significant attention due to its excellent performance in photocatalytic H2 production. The fast charge recombination, limited optical absorption and low electrical conductivity of g-C3N4 impede its practical applications. Modulating the intrinsic band gap structure to broaden light response region and enhancing the separation efficiency of photogenerated electrons and holes is a promising route to significantly improve its photocatalytic performance. In this situation, indium (In) doping into g-C3N4 nanosheets has been adopted to effectively modify the intrinsic bandgap structure to prolong the light absorption and adjust the redox potentials of g-C3N4 to promote the higher photocatalytic performance. |
