| 초록 |
Nitrogen doping in tin oxide thin films has been investigated to improve an electrical conductivity and also to make a p-type semiconductor for transparent electronic devices. In this study nitrogen doped tin oxide thin films have been fabricated by rf magnetron sputtering with two different targets which are Sn metallic target and SnO2 oxide target. Various N2/O2/Ar gas contents were evaluated and the tin oxide thin films deposited with each target were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, UV/Vis spectrometer, and Hall effect measurements. Both cases have a good transparency and showed the improved crystallinity compared to undoped tin oxide thin films. With a small amount of nitrogen incorporation electrical conductivity was improved for both cases. For tin oxide thin films deposited by SnO2 target, the mobility played an important role in improving an electrical conductivity, while for tin oxide thin films deposited by Sn target, the concentration played a key role. |
