| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 봄 (04/12 ~ 04/13, 대전컨벤션센터) |
| 권호 |
37권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Surface modification and retardation of back reaction by nitrogen ion-beam treatment in dye-sensitized solar cells |
| 초록 |
The photovoltaic performances and charge recombination of the dye sensitized solar cells (DSSCs) using nitrogen ion-beam treated TiO2 films were investigated. N+ ion-beam treated TiO2 film exhibited significantly enhanced BET surface area of 92.19 m2/g with the pore volume of 0.283 cm3/g compared to the surface area of 56.65 m2/g with a pore volume of 0.141 cm3/g of untreated TiO2 film. The substituted and interstitial affixations of nitrogen atom inside the TiO2 lattice were confirmed by XPS and Raman spectroscopy. N+ ion-beam treated TiO2 films suggested the smaller number of trap sites and fewer recombinations in DSSCs under the ion fluence of 0.37×1017 ions/cm2 at 1250 eV. A 26% improvement in conversion efficiency was achieved by using N+ ion-beam treated TiO2 photoelectrode. |
| 저자 |
Mohammad Al-Mamun, 최현정, 고영희, 전고은, 김성룡
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| 소속 |
충주대 |
| 키워드 |
Ion-beam; recombination reactions; DSSC; Raman; Surface modification
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| E-Mail |
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