| 초록 |
Cu2ZnSn(S,Se)4 thin film solar cells have been fabrication using sputtered Cu/Sn/Zn mettallic precusor on Mo coated sodalime glass (Mo-SLG) substrate without using a toxic H2Se and H2S atmophere. The As-deposited metallics precursors were sulfo-selenized in graphite box containing S and Se powder using rapid thermal annealing (RTA) furnace. thin film solar cells were fabricated after sulfo-selenization process using a 25nm CdS buffer layer, a 100 nm intrinsic ZnO, a 600 nm Al doped ZnO, and Al/Ni top metal contact. The effect of annealing process pressure and CdS buffer layer thickness on the morphological, structrure and electrical properties have been studied by field emission scanning electron microscopy (FESEM), X-ray diffeaction (XRD), Raman spectroscopy, I-V and quantum efficiency mearsurement system, and time resolved photoluminescence spectroscopy, resprectively. The fabrication Cu2ZnSn(S,Se)4 thin film solar cell show the best conversion efficiency of 11.80 % (Voc: 484.6 mV, Jsc: 37.50 mA/cm2, FF: 64.91%, and active area : 0.3 cm2), which is the highest efficiency. |
