| 초록 |
Cu2ZnSn(S,Se)4(CZTSSe) has been emerged as an attractive candidate to replace CdTe, CIGS, silicon based thin film solar cells (TFSCs). In a present study, In doped SnO2 (ITO) thin films as a window layer in CZTSSe TFSCs were optimized to improve a device efficiency. ITO thin films are deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering by varying the working pressure during the deposition. The influence of different working pressure on the morphological, optical and electrical properties of ITO thin films as well as on the CZTSSe TFSCs efficiency were investigated. All the deposited thin films showed a uniform microstructure with transmittance of over 83% in visible region though it possesses comparable resistivity differences. Especially, ITO thin film deposited at 1mTorr showed improved electrical properties having lowest resistivity of 4.59 x 10-4 Ωcm, higher carrier concentration of 3.94 x 1020 cm-3, high mobility of 34.3 cm2v-1s-1 and lower sheet resistance of 15.2 Ω/SQ respectively. |
