| 초록 |
Cu2ZnSn(SxSe1-x)4(CZTSSe) thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass(Mo-SLG) substrate without using a toxic H2Se and H2S atmosphere. The metallic precursor thin films were sulfo-selenized in graphite box containing S and Se powder using rapid thermal annealing(RTA) furnace. After the absorber formation process, solar cells were processed by deposition of CdS buffer, intrinsic ZnO: Al doped ZnO window layer, and Al grid top metal contact. We have confirmed the influence of various annealing process changes through experiment. CZTSSe Absorber layer on morphological, structural and electrical properties have been studied using field emission scanning electron microscopy (FE-SEM), FluorescenceSpectrometer (XRF), X-ray diffraction(XRD), I-V and quantum efficiency measurement system. Detailed results of the experiment wil be discussed through the presentation. |
