| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
Film characteristics of Zinc Oxide Grown by Atmospheric Mist Chemical Vapor Deposition |
| 초록 |
ZnO thin film was fabricated to evaluate the characteristics of ZnO as an active layer of thin film transistors(TFTs). Mist-CVD was used for the deposition which has a characteristic of solution based and atmospheric pressure. ZnO solution was preapared by dissolving zinc acetate dehydrate in methanol solvent with a concentration of 0.015M. The dependence of temperature was observed in the range of 250oC to 350oC. The high deposition temperature functioned to increase the oxygen vacancies which influenced the mobility higher. The effect of water in the solvent was observed by various ratio of water. The ratios were controlled by mixing deionized water in the solvent (0-1%). Hydrogen that incorporated in ZnO by increasing the water ratio played an important role by determining the transistor characteristics which increased mobility of the thin film transistor. |
| 저자 |
배재윤, 전혜지, 박진성
|
| 소속 |
한양대 |
| 키워드 |
Mist-Chemical Vapor Deposition; Oxide Semiconductor; Thin film transistor
|
| E-Mail |
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