| 초록 |
In contrast to inorganic NW devices, organic NW (ONW)-based devices have not been studied intensively, which may be attributed to the lack of reliable and reproducible process to fabricate highly aligned ONW arrays. With our home-built ‘Electro-hyrdrodynamic Nozzle Printing’ (ENP), we achieved highly aligned NW field-effect transistors (FETs) in large area. We fabricated p-channel and n-channel field-effect transistors. We also developed a powerful lithographic process, ONW lithography (ONWL), which can form the metal nano-patterns. With ENP and ONWL, we fabricated the 300 nm NW FETs with a channel length of ~340 nm. We modulated the charge injection barrier by using work-function-tunable polymeric electrodes and then we achieved significant enhancement in mobilities. We finally realized low-voltage-operating ONW FETs which showed a high mobility of 1.5 cm2/Vs by using the polymer electrolytes consisting of an ionic liquid and triblock copolymer as the gate insulator. |
