| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 전자 재료 |
| 제목 | Electroplated Sn-3.5wt%Ag fine pitch solder bump for wafer level packaging |
| 초록 | Recently, tin-lead solder bump have been substituted Pb-free alloys which utilized at micro joining in packaging process. Especially, tin-silver and tin-silver-copper alloys are promising materials, which have a good properties such as conductivity, reliability, melting point and so on, and line width and bump pitch have reduced due to increase of number of IO counts which was elevated integration density. A novel method to cope with the circumstance was including solder jetting and electroplating. Electroplating methods were used many PWB manufacturing process owing to ease mass product and fill micrometer size holes. In this study, we fabricate Sn-Ag solder bump (height of 30 μm, width of 70 μm) using pyrophosphate and iodide bath after electroplated Cu post (height of 15 μm) on UBM sputtered Si wafer. The plating bath was circulated by electrolytes cycling system for enhancement of bump uniformity. Surface morphologies and composition of the solder bumps were evaluated by SEM and EPMA, respectively. In result, we could achieve electroplating process of the fabrication of tin-silver solder bumps for wafer level packaging. |
| 저자 | Seong-Hun Na1, Yong-Ho Lee2, In-Soo Park1, Jang-Hyun Kim2, Su-Jeong Suh1 |
| 소속 | 1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ. |
| 키워드 | Electroplating; Sn-Ag; Fine pitch solder bump; Wafer level packaging |
