| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
E. 환경/센서 재료분과 |
| 제목 |
Utilizing 2D Atomic Layers for Diverse Applications |
| 초록 |
Two-dimensional (2D) transition metal dichalcogenides (TMDs) atomic layers have a strong potential to be used as 2D electronics components due to their finite bandgaps and various other interesting electronic properties. In addition to drawing interest due to their potential use in individual-atomic-layer devices, combinations of atomic layers with different compositions into van der Waals (vdW) heterostructures have gained interest because of the possibility of generating a large number of electronically variant systems. However, intrinsic synthesis challenges have made this task difficult. In this presentation, a high-performance gas sensor constructed using atomic-layered MoS2 and show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1−xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. |
| 저자 |
함명관1, Pulickel M. Ajayan2, 조병진3
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| 소속 |
1인하대, 2Rice Univ., 3한국기계(연) |
| 키워드 |
Transition metal dichalcogenides; semicoductor; gas sensor
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| E-Mail |
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