| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Titanium oxide thin films deposited by plasma enhanced atomic layer deposition for encapsulation of organic devices |
| 초록 | In this paper, we propose that 90 nm titanium oxide films deposited by plasma enhanced atomic layer deposition (PEALD) at temperature lower than 90 ℃, are suitable passivation layer for organic devices such as OLEDs and polymer memory. Passivation layer deposited by ALD or CVD has been extensively studied because deposited films for organic devices and OLEDs have high density. Furthermore, step coverage is the most important thing for tranch structure in newly electronic devices. To investigate structural behaviors, morphology and chemical composition of deposited TiO2 films, we used X-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and high resolution transmission electron microscopy (HRTEM). Through the measurement of water vapor transition rate (WVTR) of various thicknesses from 10 nm to 90 nm, we could suggest that titanium oxide deposited by PEALD could be used as a passivation layer for organic devices. A WVTR of the 90 nm titanium oxide film by PEALD was 0.05 g/m2/day and the value of 0.05 g/m2/day is the detection limit of system (MOCON corporation). Acknowledgments This work was supported by the Ministry of Commerce, Industry and Energy (MOCIE) National Research Program for 0.1 Tb Non-volatile Memory Development. |
| 저자 | 김태섭, 김웅선, 고명균, 박종완 |
| 소속 | 한양대 |
| 키워드 | titanium oxide; plasma enhanced atomic layer deposition; passivation layer |
