| 초록 |
This study presents a new compact model of floating gate non-volatile memory cells for Flash Memory using all ink-jet printing. Floating gate transistors relate to a memory, based on organic material and applied in combination with an organic integrated plastic circuit. A conventional flash cell is basically a floating-gate MOS transistor, a transistor with a gate completely surrounded by dielectrics, the floating gate (FG), and electrically governed by a capacitively coupled control gate (CG). In this presentation, all of components of the floating-gate MOS transistor has been substituted inkjet printable materials such as SWNT, conducting polymer, and insulating polymer. Being electrically isolated, the printed FG acts as the storing electrode for the cell device; charge injected in the FG is maintained there, allowing modulation of the 'apparent' threshold voltage of the cell transistor. |
