| 초록 |
Atomically thin Van der Waals materials such as graphene, metal dichalcogenides and h-BN have been intensively studied for their extraordinary quantum behaviors and potential device applications. Among those 2D materials, h-BN is a significant insulating component, known to have very large energy band gap of ~6 eV. In addition, h-BN is a decent substrate for the other 2D materials due to very clean surface without dangling bonds on the surface. In this study, we present wafer scale growth of a few layer h-BN achieved by metal-organic vapor phase epitaxy (MOVPE). Properties of grown h-BN, including atomic structure and wafer-scale uniformity, are investigated by transmission electron microscopy (TEM), Raman spectroscopy, and X-ray absorption fined structure (NEXAFS). Furthermore, we demonstrate h-BN as a substrate for graphene FET, showing superior performance to SiO2 substrate. |
