| 초록 |
Recently many researches on ZnO nanowire-based field effect transistor were performed due to its transparency, sensing and power generation abilities, and etc. It has been fabricated by synthesizing ZnO nanowires using bottom-up approaches and integrating them with metal contacts. However, low throughput in assembly of this method limits its applications. We demonstrate parallel assembly of randomly grown ZnO nanowires by transfer printing using polymer substrate. ZnO nanowires, which were randomly grown on silicon subsbrate, are transferred to a polymer substrate. After that they were transferred to the target substrate and came to lie between two metal electrodes. The electrical characteristic of the fabricated device is measured. This method can provide a large area integration of randomly grown ZnO nanowires and its application to field effect transistors |
