| 초록 |
The requirements of non-volatile memory devices with high density and high performances are increasing by market expansion related to mobile and information equipments. The non-volatile memory devices based on organic and polymeric materials are suggested to overcome the complex fabrication techniques in silicon and the limitation of inorganic material properties by device shrinkage. Especially, the polymer devices are independent of substrate type and the active material performances in devices may be improved by modification of polymer backbone structures and functional groups during material synthetic processes. The polymer devices consisted of a metal and carbazole derivative polymers as active materials. Also, metal layers as electrodes are deposited to detect and to control devices electric status. The devices are investigated current-voltage properties, capacitance-voltage properties, and so on. |
