| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | ZnO:F films by magnetron sputter-deposition: A comparison of fluorine sources between ZnF2 containing targets and CF4 containing gas mixtures |
| 초록 | Recently, doped ZnO films have drawn much attention as an alternative transparent conducting oxide (TCO) for Sn doped In2O3 (ITO) due to the cost effectiveness combined with abundance of raw material and their electrical and optical characteristics comparable to ITO. Although fluorine is also a potential candidate for dopant to ZnO, unlike cationic dopants such as Al, Ga and H, studies on the fluorine doped ZnO (FZO) films, especially, films deposited by using a physical vapor deposition technique like magnetron sputtering, are rare. In this study, FZO films were deposited by radio frequency (rf) magnetron sputtering on Corning glass (Eagle 2000) substrates, and the electrical, optical and compositional properties of the as-deposited and the vacuum-annealed (at 300 oC) FZO films were examined. Doping of fluorine was made by using two methods; (1) by sputtering of ZnO targets containing ZnF2 with pure Ar gas, and (2) by sputtering pure ZnO target in Ar/CF4 gas mixtures. For both sets of the as-deposited FZO films, the fluorine contents increased monotonically with increasing ZnF2 content in target and CF4 flow rate in sputter gas mixture. Their behaviors of electrical properties with respect to fluorine content in films were similar, in that the free carrier number and the Hall mobility exhibited a maximum and a minimum behavior, respectively. Upon annealing in vacuum, however, the improvement in electrical properties was attained via different ways; (1) by rising of the free carriers as well as the Hall mobility for films deposited from ZnF2 containing target, and (2) by a large increase in the Hall mobility with a little change in carrier concentration for films fabricated by using CF4 gas. Also, appreciable differences in the optical and the structural properties were noticed, indicating that the two different fluorine sources might cause different growth modes as well as different states of the incorporated fluorine. |
| 저자 | 김용현1, 구대영2, 윤희성3, 이경석4, 이택성4, 정병기4, 성태연1, 김원목4 |
| 소속 | 1고려대, 2일동 화학, 3LG 마이크론, 4한국과학기술(연) |
| 키워드 | Fluorine doped ZnO film; Transparent conducting oxide; Magnetron sputtering; Vacuum–annealing |
