| 초록 |
Non-volatile organic memory has emerged as a candidate for low-cost, light-weight and flexible charge storage media. Here we report on a solution-processed organic transistor memory using a state-of-the-art n-channel (and potentially ambipolar) polymer semiconductor, poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)), and bi-layered polymer gate dielectrics. High electron mobility, air-stability, and ambipolarity of the P(NDI2OD-T2) molecule enable to develop high performance organic flash memory with a fast switching speed, large memory window, and environmental stability. The organic memory devices fabricated by embedding various metal nanoparticles (for the generation of charge storage sites) in bi-layered gate dielectric (as a charge tunneling and blocking layer) of the OFET, which show large memory window and long retention time by proper selection of the dielectric material and its orthogonal solvent. |
