| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 | Characterization of sulfurized CIGS thin films using sulfur vapor |
| 초록 | Cu(In,Ga)Se2 (CIGS) is promising absorbing materials for thin-film solar cells because of its direct band-gap and high absorption coefficient. The best efficiency of solar cell using this material for absorber is recorded 20.3% in ZSW. However CIGS solar cells are still insufficient to compete against crystalline silicon solar cell in large-area module market regarding cost and performance. So increase in Voc is required by expanding the band-gap of CIGS. Cd-free buffer layers such as ZnS and In2S3 also need expanded CIGS band-gap because of their high band-gap. Sulfurization process is assumed to be effective to solve these issues. In addition, using sulfur powder to replace H2S gas is relatively less toxic and contributes to cost-down of sulfurized CIGS solar cells. In this study, CIGS film was sulfurized with sulfur vapor to heat various amount of sulfur powder at various temperatures. The characterization of this film was investigated by Scanning electron microscopy(SEM), Energy-dispersive spectroscopy(EDS) and Raman spectroscopy. |
| 저자 | 고영민, 김지혜, 안병태 |
| 소속 | 한국과학기술원 신소재공학과 |
| 키워드 | Cu(In; Ga)Se2; Solar cell; Surface sulfurization; Sulfurizing temperature |
