| 초록 |
The Hierarchical Pd decorated CVD graphene electrode (HPCVD) were fabricated by using electrodeposition method. The degree of sharpness was controlled by concentration of sulfuric acid which prohibits the growth of Pd lattice. These HPCVD were applied to detect the field-effect transistor (FET)- based glucose sensor at room temperature. The HPCVD sensor shows the p-type behavior, because of numerous oxygen group on CVD graphene. Furthermore, the minimum detectable level (MDL) of HPCVD was as low as 1 pM, which is higher than a chemical sensor based on the other metal/organic composite. |
