| 학회 |
한국재료학회 |
| 학술대회 |
2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 |
11권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
CeO2 완충층을 이용한 SrBi2Ta2O9 박막의 식각 정지 특성 |
| 초록 |
Etch stop process of SrBi2Ta2O9(SBT) over CeO2 in the Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) was reported in this paper. The etch stop of ferroelectric thin film on the silicon surface without damage is important for the process of the self-aligned gate structure in the fabrication of Single Transistor Type Ferroelectric Random Access Memory. The high vertical etching angle is also necessary for high integration. We investigated the etch rate of SBT, Si and CeO2 which were used as a buffer layer to improve the interface between SBT and silicon with various Ar/Cl2 gas mixtures, ICP powers and RF bias powers in the ICP-RIE. The highest etching selectivity of SBT/CeO2 and SBT/Si was 6.8 and 0.3 respectively. The vertical angle of SBT was 82 degree. The SEM images and XPS surface analyses showed good etch stop characteristics of the buffer layer without damage of silicon surface. |
| 저자 |
권영석1, 심선일1, 김용태2, 최인훈1
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| 소속 |
1고려대, 2한국과학기술(연) |
| 키워드 |
ICP-RIE; Etch stop; Etch rate; Selectivity
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| E-Mail |
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