| 초록 |
Organic electric devices have recently been of great interest. Non-volatile ferroelectric memory device using poly(vinylidene fluoride Trifluoroethylene) (P(VDF-TrFE)) is one of representative organic memory devices. We used soluble organic semiconductor, P3HT, which has great benefits of its solution process and large area fabrication, for high-performance P(VDF-TrFE) ferroelectric memory devices. For the reliable FeFETs based on the organic materials, device fabrication via facile patterning is one of the most feasible processes. We have investigated vacuum-free FeFET based on P3HT micro contact printing combined with Ag transfer method, systematically changing surface energy of P3HT layer using thermal annealing. The influence of pattered P3HT active layer on FeFET performance gave rise to not only high hysteresis on/off ratio ~104, but also significantly reduced gate leakage current under ~10-11. |
