| 초록 |
In order to overcome the intrinsic limitations of Cu2O, among the various substitutes for p-type semiconducting materials, CuFeO2 has been reported as a strong candidate for its proper band gap of 1.5 eV, the larger absorption coefficient, and the superior stability, compared to Cu2O. However, notable photocathode activity for CuFeO2 has not been shown up to recently. The existence of a surface disordered layer that pins down the fermi-level is mainly pointed out as the cause of the inhibited hydrogen evolution reaction(HER). In this research, by Introduction of the Ga2O3 over-layer and Indium alloying therein, surface states on the surface of CuFeO2 has been addressed and the conduction band edge offset is also controlled, achieving an enhanced HER activity with the over-layer hetero-structure engineering |
