The electrical properties of Pb(Zr, Ti)O-3 thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O-3 thin films at a high temperature above 750 degrees C in a few seconds. The thin film heater has some advantages, such as a low thermal budget, little Pb-loss and enhanced surface morphology compared with the conventional furnace because it has a fast heating rate. The electrical properties of the Pb(Zr, Ti)O-3 thin film crystallized by thin film heater improved considerably comparing to those Crystallized in conventional furnace. The remanent polarization, breakdown field, and leakage current density measured to be 22.7 mu C/cm(2), 853 kV/cm, and 6.93 x 10(-7) A/cm(2), respectively. (c) 2007 Elsevier Ltd. All rights reserved.