Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition in a CH4 gas flow rate of 1 sccm, and the influence of the gas flow rates of SiH4 and H-2 gases on the film structure and properties were investigated. In the case of a H-2 gas flow rate below 100 sccm, the SiC:H films obtained in SiH4 gas flow rates of 3 and 4 sccm were amorphous. On the other hand, when the H, gas flow rate was above 150 sccm, SiH4 gas flow rates of 4 and 3 sccm resulted in a Si-crystallite-embedded amorphous SiC:H film and a nanocrystalline cubic SiC film, respectively. It was found that gas flow rates were important parameters for controlling film structure. (C) 2007 Elsevier B.V. All rights reserved.