화학공학소재연구정보센터
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No. Article
1 Covalent immobilization of 4-pyridinepropanol monolayers on Si(111) surfaces: Axially ligation F16CoPc on pyridine moieties
Alavi A, Tahay P, Safari N
Applied Surface Science, 480, 235, 2019
2 Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy
Kim YJ, Gao Y, Herman GS, Thevuthasan S, Jiang W, McCready DE, Chambers SA
Journal of Vacuum Science & Technology A, 17(3), 926, 1999
3 Electrical properties of AlN thin films deposited at low temperature on Si(100)
Aardahl CL, Rogers JW, Yun HK, Ono Y, Tweet DJ, Hsu ST
Thin Solid Films, 346(1-2), 174, 1999
4 Determination of vibrational energy relaxation rates of C-H,D,T stretching modes on hydrogen, deuterium, and tritium-terminated H,D,T/C(111) and H,D,T/C(110) diamond surfaces using molecular dynamics simulation : Thermal effect
Lu HF, Ho MS, Hong SC, Liu AH, Wu PF, Sun YC
Journal of Chemical Physics, 109(16), 6898, 1998
5 In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber
Hiroyama Y, Tamura M
Journal of Vacuum Science & Technology A, 16(5), 2956, 1998
6 In-Situ Monitoring of Electrochemical Processes at the (100)P-Si/Aqueous NH4(F) Electrolyte Interface by Photoluminescence
Rappich J, Timoshenko VY, Dittrich T
Journal of the Electrochemical Society, 144(2), 493, 1997
7 Epitaxial-Growth of Alpha-Fe Films on CaF2(111)/Si(111) Structures
Mattoso N, Mosca DH, Schreiner WH, Mazzaro I, Teixeira SR
Thin Solid Films, 272(1), 83, 1996
8 Epitaxial-Growth of a Metal(CoSi2) Insulator(CaF2) Nanometer-Thick Heterostructure and Its Application to Quantum-Effect Devices
Asada M, Watanabe M, Suemasu T, Kohno Y, Saitoh W
Journal of Vacuum Science & Technology A, 13(3), 623, 1995
9 Surface Phase-Transformations in the Ni/Si(111) System Observed in Real-Time Using Low-Energy-Electron Microscopy
Bennett PA, Lee MY, Parikh SA, Wurm K, Phaneuf RJ
Journal of Vacuum Science & Technology A, 13(3), 1728, 1995
10 Probing by in-Situ Scanning-Tunneling-Microscopy the Influence of an Organic Additive on Si Etching in NaOH
Allongue P, Bertagna V, Kieling V, Gerischer H
Journal of Vacuum Science & Technology B, 12(3), 1539, 1994