화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration
Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M
Solid-State Electronics, 144, 78, 2018
2 Plasma combined self-assembled monolayer pretreatment on electroplated-Cu surface for low temperature Cu-Sn bonding in 3D integration
Wang JQ, Wang Q, Wu ZJ, Tan L, Cai J, Wang DJ
Applied Surface Science, 403, 525, 2017
3 Influence of Si wafer thinning processes on (sub)surface defects
Inoue F, Jourdain A, Peng L, Phommahaxay A, De Vos J, Rebibis KJ, Miller A, Sleeckx E, Beyne E, Uedono A
Applied Surface Science, 404, 82, 2017
4 Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200 degrees C
He R, Fujino M, Akaike M, Sakai T, Sakuyama S, Suga T
Applied Surface Science, 414, 163, 2017
5 A monolithic 3D integrated nanomagnetic co-processing unit
Becherer M, Gamma SBV, Eichwald I, Ziemys G, Kiermaier J, Csaba G, Schmitt-Landsiedel D
Solid-State Electronics, 115, 74, 2016
6 UTBB FDSOI: Evolution and opportunities
Monfray S, Skotnicki T
Solid-State Electronics, 125, 63, 2016
7 Argon plasma treatment on Cu surface for Cu bonding in 3D integration and their characteristics
Park M, Baek S, Kim S, Kim SE
Applied Surface Science, 324, 168, 2015
8 Low-temperature solid state bonding method based on surface Cu-Ni alloying microcones
Lu Q, Chen Z, Zhang WJ, Hu AM, Li M
Applied Surface Science, 268, 368, 2013
9 On the electrochemistry of an anode stack for all-solid-state 3D-integrated batteries
Baggetto L, Oudenhoven JFM, van Dongen T, Klootwijk JH, Mulder M, Niessen RAH, de Croon MHJM, Notten PHL
Journal of Power Sources, 189(1), 402, 2009
10 Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 mu m and erbium silicide source/drain
Yang JH, Ahn CG, Baek IB, Jang MG, Sung GY, Park BC, Im K, Lee S
Thin Solid Films, 517(5), 1825, 2009