화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Epitaxy - A way to novel field effect devices
Sulima T, Abelein U, Eisele I
Thin Solid Films, 517(1), 365, 2008
2 Doping profile dependence of the vertical impact ionization MOSFET's (I-MOS) performance
Abelein U, Assmuth A, Iskra P, Schindler M, Sulima T, Eisele I
Solid-State Electronics, 51(10), 1405, 2007
3 Sub-50 nm high performance PDBFET with impact ionization
Born M, Abelein U, Bhuwalka KK, Schindler M, Schmidt M, Ludsteck A, Schulze J, Eisele I
Thin Solid Films, 508(1-2), 323, 2006