| 1 |
Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters enhancement
Ilahi S, Yacoubi N, Genty F
Materials Research Bulletin, 106, 332, 2018 |
| 2 |
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
Tokranov V, Nagaiah P, Yakimov M, Matyi RJ, Oktyabrsky S
Journal of Crystal Growth, 323(1), 35, 2011 |
| 3 |
Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers
Ehsani H, Lewis N, Nichols GJ, Danielson L, Dashiell MW, Shellenbarger ZA, Wang CA
Journal of Crystal Growth, 291(1), 77, 2006 |
| 4 |
Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy
Wang CA
Journal of Crystal Growth, 272(1-4), 664, 2004 |
| 5 |
Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy
Wang CA, Shiau DA, Donetsky D, Anikeev S, Belenky G, Luryi S
Journal of Crystal Growth, 272(1-4), 711, 2004 |
| 6 |
Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7 mu m laser structures
Simanowski S, Herres N, Mermelstein C, Kiefer R, Schmitz J, Walther M, Wagner J, Weimann G
Journal of Crystal Growth, 209(1), 15, 2000 |
| 7 |
MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor
Giesen C, Szymakowski A, Rushworth S, Heuken M, Heime K
Journal of Crystal Growth, 221, 450, 2000 |
