검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M Solid-State Electronics, 144, 78, 2018 |
| 2 |
Estimation of kinetic parameters and diffusion coefficients for the transesterification of triolein with methanol on a solid ZnAl2O4 catalyst Allain F, Portha JF, Girot E, Falk L, Dandeu A, Coupard V Chemical Engineering Journal, 283, 833, 2016 |
| 3 |
Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm Le Royer C, Villalon A, Hutin L, Martinie S, Nguyen P, Barraud S, Glowacki F, Allain F, Bernier N, Cristoloveanu S, Vinet M Solid-State Electronics, 115, 167, 2016 |
| 4 |
Simulation and kinetic study of transesterification of triolein to biodiesel using modular reactors Portha JF, Allain F, Coupard V, Dandeu A, Girot E, Schaer E, Falk L Chemical Engineering Journal, 207, 285, 2012 |
| 5 |
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance Le Royer C, Casse M, Cooper D, Andrieu F, Weber O, Brevard L, Perreau P, Damlencourt JF, Baudot S, Previtali B, Tabone C, Allain F, Scheiblin P, Rauer C, Figuet C, Aulnette C, Daval N, Nguyen BY, Bourdelle KK, Gyani J, Valenza M Solid-State Electronics, 65-66, 9, 2011 |
| 6 |
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T Solid-State Electronics, 53(7), 730, 2009 |
| 7 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |