검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Poly(vinyl alcohol) acetoacetate-based tissue adhesives are non-cytotoxic and non-inflammatory Bhatia SK, Arthur SD Biotechnology Letters, 30(8), 1339, 2008 |
| 2 |
Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs Okayama T, Arthur SD, Garrett JL, Rao MV Solid-State Electronics, 52(1), 164, 2008 |
| 3 |
Interactions of polysaccharide-based tissue adhesives with clinically relevant fibroblast and macrophage cell lines Bhatia SK, Arthur SD, Chenault HK, Kodokian GK Biotechnology Letters, 29(11), 1645, 2007 |
| 4 |
Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes Cao XA, Lu H, Kaminsky EB, Arthur SD, Grandusky JR, Shahedipour-Sandvik F Journal of Crystal Growth, 300(2), 382, 2007 |
| 5 |
Cathodoluminescence mapping and selective etching of defects in bulk GaN Lu H, Cao XA, LeBoeuf SF, Hong HC, Kaminsky EB, Arthur SD Journal of Crystal Growth, 291(1), 82, 2006 |
| 6 |
3D-NMR studies of B-centered n-ad structures in poly(ethylene-co-C-13-n-butyl acrylate-co-carbon monoxide) Monwar M, Sahoo SK, McCord EF, Arthur SD, Walsh DJ, Rinaldi PL Macromolecules, 39(8), 2886, 2006 |
| 7 |
Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD Journal of Vacuum Science & Technology B, 23(4), 1576, 2005 |
| 8 |
Microstructural origin of leakage current in GaN/InGaN light-emitting diodes Cao XA, Teetsov JA, Shahedipour-Sandvik F, Arthur SD Journal of Crystal Growth, 264(1-3), 172, 2004 |
| 9 |
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW Journal of Crystal Growth, 269(2-4), 242, 2004 |
| 10 |
Partial dislocations and stacking faults in 4H-SiC PiN diodes Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S Materials Science Forum, 457-460, 537, 2004 |