검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Crystallinity control of SiC grown on Si by sputtering method Watanabe R, Tsukamoto T, Kamisako K, Suda Y Journal of Crystal Growth, 463, 67, 2017 |
| 2 |
Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation Kato M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K Journal of Crystal Growth, 477, 197, 2017 |
| 3 |
Growth of beta-FeSi2 on MnSi1.7 layers by reactive deposition epitaxy Kohira M, Souno Y, Matsuyama T, Tatsuoka H, Ohsugi IJ, Nishida IA, Kuwabara H Applied Surface Science, 216(1-4), 614, 2003 |
| 4 |
Formation of CaMgSi at Ca2Si/Mg2Si interface Hosono T, Kuramoto A, Matsuzawa Y, Momose Y, Maeda Y, Matsuyama T, Tatsuoka H, Fukuda Y, Hashimoto S, Kuwabara H Applied Surface Science, 216(1-4), 620, 2003 |