검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2 Murad SNA, Baine PT, McNeill DW, Mitchell SJN, Armstrong BM, Modreanu M, Hughes G, Chellappan RK Solid-State Electronics, 78, 136, 2012 |
| 2 |
Germanium on sapphire by wafer bonding Baine PT, Gamble HS, Armstrong BM, McNeill DW, Mitchell SJN, Low YH, Rainey PV Solid-State Electronics, 52(12), 1840, 2008 |
| 3 |
Polycrystalline silicon film growth in a SiF4/SiH4/H-2 plasma Lee B, Quinn LJ, Baine PT, Mitchell SJN, Armstrong BM, Gamble HS Thin Solid Films, 337(1-2), 55, 1999 |
| 4 |
The realization of silicon-on-insulator utilizing trench-before-bond and polish stop technology Baine PT, Gay DL, Armstrong BM, Gamble HS Journal of the Electrochemical Society, 145(5), 1738, 1998 |
| 5 |
Deposition and Characterization of Silicon Grown in a Sif4/SiH4/H-2 Mixture for TFT Applications Quinn LJ, Lee B, Baine PT, Mitchell SJ, Armstrong BM, Gamble HS Thin Solid Films, 296(1-2), 7, 1997 |
| 6 |
Single-Crystal Silicon on Glass Baine PT, Quinn LJ, Lee B, Mitchell SJ, Armstrong BM, Gamble HS Thin Solid Films, 296(1-2), 141, 1997 |