화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
Yang WX, Zhao YK, Wu YY, Li XF, Xing ZW, Bian LF, Lu SL, Luo MC
Journal of Crystal Growth, 512, 213, 2019
2 Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)
Xing ZW, Yang WX, Yuan ZB, Li XF, Wu YY, Long JH, Jin S, Zhao YK, Liu T, Bian LF, Lu SL, Luo MC
Journal of Crystal Growth, 516, 57, 2019
3 The investigation of wafer-bonded multi-junction solar cell grown by MBE
Dai P, Yang WX, Long JH, Tan M, Wu YY, Uchida S, Bian LF, Lu SL
Journal of Crystal Growth, 515, 16, 2019
4 Strain study of epitaxial Al1-xGaxN based on first-principles theory
Jin S, Li XF, Yang WX, Bian LF, Lu SL
Journal of Crystal Growth, 514, 60, 2019
5 Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy
Zhao YK, Yang WX, Lu SL, Wu YY, Zhang X, Bian LF, Li XF, Tan M
Journal of Crystal Growth, 514, 124, 2019
6 Simultaneously Enhancing Efficiency and Lifetime of Ultralong Organic Phosphorescence Materials by Molecular Self-Assembly
Bian LF, Shi HF, Wang X, Ling K, Ma HL, Li MP, Cheng ZC, Ma CQ, Cai SZ, Wu Q, Gan N, Xu XF, An ZF, Huang W
Journal of the American Chemical Society, 140(34), 10734, 2018
7 Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
Dai P, Ji L, Tan M, Uchida S, Wu YY, Abuduwayiti A, Heini M, Guo Q, Bian LF, Lu SL, Yang H
Solar Energy Materials and Solar Cells, 171, 118, 2017
8 Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy
Dai P, Tan M, Wu YY, Ji L, Bian LF, Lu SL, Yang H
Journal of Crystal Growth, 413, 71, 2015
9 Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
Ji L, Lu SL, Wu YY, Dai P, Bian LF, Arimochi M, Watanabe T, Asaka N, Uemura M, Tackeuchi A, Uchida S, Yang H
Solar Energy Materials and Solar Cells, 127, 1, 2014
10 Effect of growth conditions on the GaN thin film by sputtering deposition
Zhang CG, Bian LF, Chen WD, Hsu CC
Journal of Crystal Growth, 299(2), 268, 2007