| 1 |
The hopping variable range conduction in amorphous InAs thin films
Yao YP, Bo BX, Liu CL
Current Applied Physics, 18(12), 1492, 2018 |
| 2 |
Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals
Li J, Wang L, Yuan X, Bo BX, Li HB, Zhao JL, Gao X
Materials Research Bulletin, 102, 86, 2018 |
| 3 |
Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
Qiao ZL, Tang XH, Kenneth LEK, Huei LP, Bo BX
Solid-State Electronics, 79, 281, 2013 |
| 4 |
InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
Zhou L, Gao X, Xu LY, Qiao ZL, Bo BX
Solid-State Electronics, 89, 81, 2013 |
| 5 |
MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N-2 ambient
Tang XH, Zhang BL, Bo BX, Mei T, Chin MK
Journal of Crystal Growth, 288(1), 23, 2006 |
| 6 |
Growth characteristic and room-temperature lasing in GaInNAs quantum dots grown by solid-source molecular beam epitaxy
Sun ZZ, Yoon SF, Yew KC, Bo BX
Journal of Crystal Growth, 263(1-4), 99, 2004 |
| 7 |
Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N-2 ambient
Bo BX, Tang XH, Zhang BL, Huang GS, Zhang YC, Chuan TS
Journal of Crystal Growth, 268(3-4), 415, 2004 |
| 8 |
Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer
Wang XQ, Dua GT, Yin JZ, Li M, Li MT, Qu Y, Bo BX, Yang SR
Journal of Crystal Growth, 234(2-3), 379, 2002 |
| 9 |
Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer
Wang XQ, Du GT, Yin JH, Li M, Li MT, Qu Y, Bo BX, Yang SR
Journal of Crystal Growth, 235(1-4), 60, 2002 |
| 10 |
High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets
Yi Q, Bo BX, Zhang BS, Gao X, Zhang XD, Shi JW
Journal of Crystal Growth, 227, 202, 2001 |
