| 1 |
Investigation on the dielectric properties of titanium-loaded ionic liquid-based nano-organosilica as a novel material
Vaziri B, Hajati S, Elhamifar D
Advanced Powder Technology, 29(3), 813, 2018 |
| 2 |
The fabrication of the ultra-thin polyvinylidene fluoride dielectric films for nanoscale high energy density capacitors
Xie X, Zhou MB, Lv LQ, Liu SY, Shen J
Polymer, 132, 193, 2017 |
| 3 |
Using high-voltage electrical pulses to crush coal in an air environment: An experimental study
Yan FZ, Lin BQ, Zhu CJ, Guo C, Zhou Y, Zou QL, Liu T
Powder Technology, 298, 50, 2016 |
| 4 |
Electrical insulation and breakdown properties of SiO2 and Al2O3 thin multilayer films deposited on stainless steel by physical vapor deposition
Martinez-Perdiguero J, Mendizabal L, Morant-Minana MC, Castro-Hurtado I, Juarros A, Ortiz R, Rodriguez A
Thin Solid Films, 595, 171, 2015 |
| 5 |
Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications
Choi KK, Kee J, Kim SH, Park MS, Park CG, Kim DK
Thin Solid Films, 556, 560, 2014 |
| 6 |
Characteristics of post-nitridation rapid-thermal annealed gate oxide grown on 4H SiC
Cheong KY, Bahng W, Kim NK
Materials Science Forum, 483, 689, 2005 |
| 7 |
Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition
Ye PD, Wilk DG, Yang B, Chu SNG, Ng KK, Bude J
Solid-State Electronics, 49(5), 790, 2005 |
| 8 |
Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate
Hasegawa T, Date T, Karen A, Masuda A
Applied Surface Science, 231-2, 725, 2004 |
| 9 |
Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method
Chou DW, Wang HH, Wang YH, Houng MP
Materials Chemistry and Physics, 78(3), 772, 2003 |
| 10 |
Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC
Nakamura SI, Kumagai H, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 651, 2002 |
