검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Optical emission microscopy of structural defects in 4H-SiC PiN diodes Galeckas A, Linnros L, Breitholtz B Materials Science Forum, 389-3, 431, 2002 |
| 2 |
Investigation of electroluminescence across 4H-SiC p(+)/n(-)/n(+) structures using optical emission microscopy Galeckas A, Linnros J, Breitholtz B, Bleichner H Materials Science Forum, 353-356, 389, 2001 |
| 3 |
Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions Hillkirk LM, Breitholtz B, Domeij M Solid-State Electronics, 45(12), 2057, 2001 |
| 4 |
Optical characterization of 4H-SiC p(+)n(-)n(+) structures applying time- and spectrally resolved emission microscopy Galeckas A, Linnros J, Breitholtz B Materials Science Forum, 338-3, 683, 2000 |
| 5 |
Electron beam induced current investigation of high-voltage 4H silicon carbide diodes Osterman J, Hallen A, Jargelius M, Zimmermann U, Galeckas A, Breitholtz B Materials Science Forum, 338-3, 777, 2000 |
| 6 |
A 2.8kV, forward drop JBS diode with low leakage Dahlquist F, Svedberg JO, Zetterling CM, Ostling M, Breitholtz B, Lendenmann H Materials Science Forum, 338-3, 1179, 2000 |
| 7 |
Current voltage characteristics of high-voltage 4H silicon carbide diodes Zimmermann U, Hallen A, Breitholtz B Materials Science Forum, 338-3, 1323, 2000 |
| 8 |
Dynamic avalanche and trapped charge in 4H-SiC diodes Domeij M, Breitholtz B, Aberg D, Martinez A, Bergman P Materials Science Forum, 338-3, 1327, 2000 |
| 9 |
Dynamic avalanche in Si power diodes and impact ionization at the nn(+) junction Domeij M, Breitholtz B, Lutz J, Ostling M Solid-State Electronics, 44(3), 477, 2000 |