화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal
Alreesh MA, Von Dollen P, Malkowski TF, Mates T, Albrithen H, DenBaars S, Nakamura S, Speck JS
Journal of Crystal Growth, 508, 50, 2019
2 Growth kinetics of basic ammonothermal gallium nitride crystals
Griffiths S, Pimputkar S, Kearns J, Malkowski TF, Doherty MF, Speck JS, Nakamura S
Journal of Crystal Growth, 501, 74, 2018
3 HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis
Liu NL, Cheng YT, Wu JJ, Li XB, Yu TJ, Xiong H, Li WH, Chen J, Zhang GY
Journal of Crystal Growth, 454, 59, 2016
4 Basic ammonothermal GaN growth in molybdenum capsules
Pimputkar S, Speck JS, Nakamura S
Journal of Crystal Growth, 456, 15, 2016
5 Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
Sintonen S, Kivisaari P, Pimputkar S, Suihkonen S, Schulz T, Speck JS, Nakamura S
Journal of Crystal Growth, 456, 43, 2016
6 Evolution of impurity incorporation during ammonothermal growth of GaN
Sintonen S, Wahl S, Richter S, Meyer S, Suihkonen S, Schulz T, Irmscher K, Danilewsky AN, Tuomi TO, Stankiewicz R, Albrecht M
Journal of Crystal Growth, 456, 51, 2016
7 A new system for sodium flux growth of bulk GaN. Part I: System development
Von Dollen P, Pimputkar S, Alreesh MA, Albrithen H, Suihkonen S, Nakamura S, Speck JS
Journal of Crystal Growth, 456, 58, 2016
8 A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
Von Dollen P, Pimputkar S, Alreesh MA, Nakamura S, Speck JS
Journal of Crystal Growth, 456, 67, 2016
9 Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S
Journal of Crystal Growth, 432, 49, 2015
10 Improved growth rates and purity of basic ammonothermal GaN
Pimputkar S, Kawabata S, Speck JS, Nakamura S
Journal of Crystal Growth, 403, 7, 2014