검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs Ivana, Kong EYJ, Subramanian S, Zhou Q, Pan JS, Yeo YC Solid-State Electronics, 78, 62, 2012 |
| 2 |
Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 degrees C Adedeji AV, Ahyi AC, Williams JR, Mohney SE, Scofield JD Solid-State Electronics, 54(7), 736, 2010 |
| 3 |
Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices Chi DZ, Lee RTP, Wong ASW Thin Solid Films, 515(22), 8102, 2007 |
| 4 |
Ohmic contact to p-type GaN using a novel Ni/Cu scheme Liu SH, Hwang JM, Hwang ZH, Hung WH, Hwang HL Applied Surface Science, 212, 907, 2003 |
| 5 |
Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu/TiN/Ti metallization structure of integrated circuits Fortin V, Gujrathi SC, Gagnon G, Gauvin R, Currie JF, Ouellet L, Tremblay Y Journal of Vacuum Science & Technology B, 17(2), 423, 1999 |