화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Electrical properties of SiO2/SiC interfaces on 2 degrees-off axis 4H-SiC epilayers
Vivona M, Fiorenza P, Sledziewski T, Krieger M, Chassagne T, Zielinski M, Roccaforte F
Applied Surface Science, 364, 892, 2016
2 Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films
Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D
Journal of Crystal Growth, 398, 23, 2014
3 Structural trends in Si dots formation on SiC surfaces using CVD environment
Portail M, Vezian S, Teisseire M, Michon A, Chassagne T, Zielinski M
Journal of Crystal Growth, 404, 157, 2014
4 Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
Portail M, Michon A, Vezian S, Lefebvre D, Chenot S, Roudon E, Zielinski M, Chassagne T, Tiberj A, Camassel J, Cordier Y
Journal of Crystal Growth, 349(1), 27, 2012
5 Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
Zielinski M, Portail M, Chassagne T, Juillaguet S, Peyre H
Journal of Crystal Growth, 310(13), 3174, 2008
6 AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Cordier Y, Portail M, Chenot S, Tottereau O, Zielinski M, Chassagne T
Journal of Crystal Growth, 310(20), 4417, 2008
7 Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification
Pezoldt J, Polychroniadis E, Stauden T, Ecke G, Chassagne T, Vennegues P, Leycuras A, Panknin D, Stoemenos J, Skorupa W
Materials Science Forum, 483, 213, 2005
8 Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates
Chassagne T, Ferro G, Haas H, Leycuras A, Mank H, Monteil Y
Materials Science Forum, 457-460, 265, 2004
9 Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"
Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S
Materials Science Forum, 457-460, 273, 2004
10 Optical investigation of the built-in strain in 3C-SiC epilayers
Galeckas A, Kuznetsov AY, Chassagne T, Ferro G, Linnros J, Grivickas V
Materials Science Forum, 457-460, 657, 2004