화학공학소재연구정보센터
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No. Article
1 Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures
Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 20(3), 1205, 2002
2 High performance InP high electron mobility transistors by valved phosphorus cracker
Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR
Journal of Vacuum Science & Technology B, 18(3), 1642, 2000
3 Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 18(3), 1658, 2000
4 InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker
Chin TP, Gutierrez-Aitken AL, Cowles J, Kaneshiro EN, Han AC, Block TR, Oki AK, Streit DC
Journal of Vacuum Science & Technology B, 17(3), 1136, 1999
5 Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 17(3), 1163, 1999
6 InGaP/GaAs/InGaP Double-Heterojunction Bipolar-Transistors Grown by Solid-Source Molecular-Beam Epitaxy with a Valved Phosphorus Cracker
Chin TP, Chang JC, Woodall JM, Chen WL, Haddad GI
Journal of Vacuum Science & Technology B, 14(3), 2225, 1996
7 Heavy Be Doping of Gap and InxGa1-Xp
Tagare MV, Chin TP, Woodall JM
Journal of Vacuum Science & Technology B, 14(3), 2325, 1996
8 InP/InGaAs Single-Heterojunction Bipolar-Transistors Grown by Solid-Source Molecular-Beam Epitaxy Using a Phosphorus Valved Cracker
Chen WL, Chin TP, Woodall JM, Haddad GI
Journal of Vacuum Science & Technology B, 14(4), 2739, 1996
9 Operation and Device Applications of a Valved-Phosphorus Cracker in Solid-Source Molecular-Beam Epitaxy
Chin TP, Chang JC, Woodall JM, Chen WL, Haddad GI, Parks C, Ramdas AK
Journal of Vacuum Science & Technology B, 13(2), 750, 1995