화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
Chen CY, Chiou WH, Yen CH, Chuang HM, Chen JY, Cheng CC, Liu WC
Journal of Vacuum Science & Technology B, 21(1), 82, 2003
2 On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
Wang CK, Yu KH, Chiou WH, Chen CY, Chuang HM, Liu WC
Solid-State Electronics, 47(1), 19, 2003
3 A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
Chen CY, Wang WC, Chiou WH, Wang CK, Chuang HM, Cheng SY, Liu WC
Solid-State Electronics, 46(9), 1289, 2002