| 1 |
Chemical roles on Cu-slurry interface during copper chemical mechanical planarization
Li J, Liu YH, Pan Y, Lu XC
Applied Surface Science, 293, 287, 2014 |
| 2 |
Electrochemical investigation of the surface-modifying roles of guanidine carbonate in chemical mechanical planarization of tantalum
Rock SE, Crain DJ, Zheng JP, Pettit CM, Roy D
Materials Chemistry and Physics, 129(3), 1159, 2011 |
| 3 |
Electrochemical characterization of surface complexes formed on Cu and Ta in succinic acid based solutions used for chemical mechanical planarization
Sulyma CM, Roy D
Applied Surface Science, 256(8), 2583, 2010 |
| 4 |
Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance
Nagar M, Vaes J, Ein-Eli Y
Electrochimica Acta, 55(8), 2810, 2010 |
| 5 |
Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurry. Part I. Elucidating slurry chemistry
Nagar M, Starosvetsky D, Vaes J, Ein-Eli Y
Electrochimica Acta, 55(10), 3560, 2010 |
| 6 |
Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide-hydrogen peroxide based slurries
Venkatesh RP, Ramanathan S
Journal of Applied Electrochemistry, 40(4), 767, 2010 |
| 7 |
Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent
Klug BK, Pettit CM, Pandija S, Babu SV, Roy D
Journal of Applied Electrochemistry, 38(10), 1347, 2008 |
| 8 |
Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor
Prasad YN, Ramanathan S
Electrochimica Acta, 52(22), 6353, 2007 |
| 9 |
Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology
Chen KW, Wang YL, Liu CP, Chang L, Li FY
Thin Solid Films, 498(1-2), 50, 2006 |
| 10 |
Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향
박진형, 김민석, 백운규, 박재근
Korean Journal of Materials Research, 15(6), 426, 2005 |
