검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient Bera LK, Mathew S, Balasubramanian N, Braithwaite G, Currie MT, Singaporewala F, Yap J, Hammond R, Lochtefeld A, Bulsara MT, Fitzgerald EA Applied Surface Science, 224(1-4), 278, 2004 |
| 2 |
Strained Si on insulator technology: from materials to devices Langdo TA, Currie MT, Cheng ZY, Fiorenza JG, Erdtmann M, Braithwaite G, Leitz CW, Vineis C, Carlin JA, Lochtefeld A, Bulsara MT, Lauer I, Antoniadis DA, Somerville M Solid-State Electronics, 48(8), 1357, 2004 |
| 3 |
Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Taraschi G, Langdo TA, Currie MT, Fitzgerald EA, Antoniadis DA Journal of Vacuum Science & Technology B, 20(2), 725, 2002 |
| 4 |
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates Currie MT, Leitz CW, Langdo TA, Taraschi G, Fitzgerald EA, Antoniadis DA Journal of Vacuum Science & Technology B, 19(6), 2268, 2001 |
| 5 |
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD Tan CS, Choi WK, Bera LK, Pey KL, Antoniadis DA, Fitzgerald EA, Currie MT, Maiti CK Solid-State Electronics, 45(11), 1945, 2001 |