화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth
Park JS, Curtin M, Hydrick JM, Bai J, Li JT, Cheng Z, Carroll M, Fiorenza JG, Lochtefeld A
Electrochemical and Solid State Letters, 12(4), H142, 2009
2 Fabrication of Low-Defectivity, Compressively Strained Ge on Si0.2Ge0.8 Structures Using Aspect Ratio Trapping
Park JS, Curtin M, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A
Journal of the Electrochemical Society, 156(4), H249, 2009
3 Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates
Park JS, Bai J, Curtin M, Carroll M, Lochtefeld A
Journal of Vacuum Science & Technology B, 26(1), 117, 2008
4 Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping
Park JS, Curtin M, Hydrick JM, Carroll M, Fiorenza JG, Lochtefeld A, Novak S
Journal of Vacuum Science & Technology B, 26(5), 1740, 2008
5 Reduced-pressure chemical vapor deposition of epitaxial ge films on si(001) substrates using GeCl4
Park JS, Curtin M, Major C, Bengtson S, Carroll M, Lochtefeld A
Electrochemical and Solid State Letters, 10(11), H313, 2007
6 A Plant Gets Reborn
Candy B, Curtin M
Chemical Engineering, 104(9), 185, 1997