검색결과 : 6건
No. | Article |
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1 |
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth Park JS, Curtin M, Hydrick JM, Bai J, Li JT, Cheng Z, Carroll M, Fiorenza JG, Lochtefeld A Electrochemical and Solid State Letters, 12(4), H142, 2009 |
2 |
Fabrication of Low-Defectivity, Compressively Strained Ge on Si0.2Ge0.8 Structures Using Aspect Ratio Trapping Park JS, Curtin M, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A Journal of the Electrochemical Society, 156(4), H249, 2009 |
3 |
Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates Park JS, Bai J, Curtin M, Carroll M, Lochtefeld A Journal of Vacuum Science & Technology B, 26(1), 117, 2008 |
4 |
Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping Park JS, Curtin M, Hydrick JM, Carroll M, Fiorenza JG, Lochtefeld A, Novak S Journal of Vacuum Science & Technology B, 26(5), 1740, 2008 |
5 |
Reduced-pressure chemical vapor deposition of epitaxial ge films on si(001) substrates using GeCl4 Park JS, Curtin M, Major C, Bengtson S, Carroll M, Lochtefeld A Electrochemical and Solid State Letters, 10(11), H313, 2007 |
6 |
A Plant Gets Reborn Candy B, Curtin M Chemical Engineering, 104(9), 185, 1997 |