검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Characteristics of Aluminum Films Prepared by Metalorganic Chemical Vapor Deposition Using Diemthylethylamine Alane on the Plasma-Pretreated TiN Surfaces Kim DH, Kim BY Korean Journal of Chemical Engineering, 17(4), 449, 2000 |
| 2 |
Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine Robinson DW, Rogers JW Thin Solid Films, 372(1-2), 10, 2000 |
| 3 |
Electrical properties of AlN thin films deposited at low temperature on Si(100) Aardahl CL, Rogers JW, Yun HK, Ono Y, Tweet DJ, Hsu ST Thin Solid Films, 346(1-2), 174, 1999 |
| 4 |
Surface passivation technique for selective hole filling by chemical vapor deposition Rhee SW, Yun JH Journal of Materials Science Letters, 17(11), 947, 1998 |
| 5 |
Effect of additives on the viscosity of liquid-phase dimethylaluminum hydride Yun JH, Lee JH, Park JW, Rhee SW Journal of the Electrochemical Society, 145(2), L23, 1998 |