| 1 |
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
Jaikumar MG, Akshay K, Karmalkar S
Solid-State Electronics, 156, 73, 2019 |
| 2 |
Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior
Baek S, Lee J, Park I, Baek RH, Lee JS
Solid-State Electronics, 140, 18, 2018 |
| 3 |
On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs
Jaikumar MG, Rao RR, Karmalkar S
Solid-State Electronics, 114, 49, 2015 |
| 4 |
Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer
Juang MH, Hwang CC, Shye DC, Wang JL, Jang SL
Solid-State Electronics, 54(7), 724, 2010 |
| 5 |
Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs
Okayama T, Arthur SD, Garrett JL, Rao MV
Solid-State Electronics, 52(1), 164, 2008 |
| 6 |
4H-SiC DMOSFETs for high speed switching applications
Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J
Materials Science Forum, 483, 797, 2005 |
| 7 |
Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration
Khanna VK, Kumar A, Sood SC, Gupta RP, Jasuja KL, Maj B, Kostka A
Solid-State Electronics, 45(10), 1859, 2001 |
| 8 |
4H-SiC self-aligned implant-diffused structure for power DMOSFETs
Suvorov AV, Lipkin LA, Johnson GM, Singh R, Palmour JW
Materials Science Forum, 338-3, 1275, 2000 |
