화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Assessment of particle size distribution in CO2 accidental releases
Hulsbosch-Dam CEC, Spruijt MPN, Necci A, Cozzani V
Journal of Loss Prevention in The Process Industries, 25(2), 254, 2012
2 Influence of In on the surface morphology of HYPE grown GaN
Dam CEC, Hageman PR, van Enckevort WJP, Bohnen T, Larsen PK
Journal of Crystal Growth, 307(1), 19, 2007
3 Method for HVPE growth of thick crack-free GaN layers
Dam CEC, Grzegorczyk AP, Hageman PR, Larsen PK
Journal of Crystal Growth, 290(2), 473, 2006
4 Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study
Dam CEC, Hageman PR, Larsen PK
Journal of Crystal Growth, 285(1-2), 31, 2005
5 The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations
Dam CEC, Grzegorczyk AP, Hageman PR, Dorsman R, Kleijn CR, Larsen PK
Journal of Crystal Growth, 271(1-2), 192, 2004